x process meaning in Chinese

脱模法

For the first current plateau ， two kinds of sequential resonant tunneling of - process and - x process are observed in the wide barrier gaas / alas superlattice under various pressures for p < 2kbar ， the high field domain is formed by - process ， while for p > 2kbar ， the high field domain is formed by - x process when the barrier width was decreased to 2nm , we found that ground - state -
对于宽垒( > 3 . 5nm )的gaaa / alas超晶格，当流体静压力超过临界压力2kbar后，平台宽度随压力的升高而收缩。对于窄垒( 2nm ) gaaa / alas超晶格， u - i曲线上的平台将不随压力变窄。